SSM6N42FE 2009-10-13 1 toshiba field-effect transistor silicon n-channel mos type SSM6N42FE power management switch applications high-speed switching applications ? 1.5v drive ? n-ch 2-in-1 ? low on-resistance : r ds(on) = 600 m ? (max) (@v gs = 1.5v) : r ds(on) = 450 m ? (max) (@v gs = 1.8v) : r ds(on) = 330 m ? (max) (@v gs = 2.5v) : r ds(on) = 240 m ? (max) (@v gs = 4.5v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristic symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d (note 1) 800 drain current pulse i dp (note 1) 1600 ma drain power dissipation p d (note 2) 150 mw channel temperature t ch 150 c storage temperature t stg - 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/v oltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: the junction temperature should not exceed 150 c during use. note 2: total rating mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) marking equivalent circuit (top view) g: mm 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 0.120.05 0.550.05 jedec D jeita D toshiba 2-2n1d weight: 3.0 mg (typ.) es6 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 nn4 6 5 4 1 2 3 654 123 q1 q2
SSM6N42FE 2009-10-13 2 electrical characteristics (ta = 25c) (q1, q2 common) characteristic symbol test condition min typ. max unit v (br) dss i d = 1 ma, v gs = 0 v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = - 10 v 12 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.35 ? 1.0 v forward transfer admittance |y fs | v ds = 3 v, i d = 500 ma (note 3) 1.05 2.1 ? s i d = 500 ma, v gs = 4.5 v (note 3) ? 185 240 i d = 400 ma, v gs = 2.5 v (note 3) ? 245 330 i d = 250 ma, v gs = 1.8 v (note 3) ? 310 450 drain-source on-resistance r ds (on) i d = 150 ma, v gs = 1.5 v (note 3) ? 370 600 m input capacitance c iss ? 90 ? output capacitance c oss ? 21 ? reverse transfer capacitance c rss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 15 ? pf total gate charge q g ? 2.00 ? gate-source charge q gs ? 1.02 ? gate-drain charge q gd v ds = 10 v, i d = 0.8 a v gs = 4.5 v ? 0.98 ? nc turn-on time t on ? 18 ? switching time turn-off time t off v dd = 10 v, i d = 200 ma v gs = 0 to 2.5 v, r g = 4.7 ? 50 ? ns drain-source forward voltage v dsf i d = -0.8 a, v gs = 0 v (note 3) ? -0.84 -1.2 v note 3: pulse test switching time test circuit (q1, q2 common) notice on usage let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to be low (1 ma for the SSM6N42FE). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on) . take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out 2.5 v t on t off 0 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd = 10 v r g = 4.7 duty < = 1% v in : t r , t f < 5 ns common source ta = 25c 0 2.5 v v dd 10 s r g (b) v in
SSM6N42FE 2009-10-13 3 q1, q2 common drain current i d (ma) r ds (on) ? v gs gate?source voltage v gs (v) drain?source on-resistance r ds (on) (m ? ) 04 1 0 8 26 0 1000 500 common source i d = 0.5 a 25c ta = 100c ? 25c i d ? v gs gate?source voltage v gs (v) drain current i d (ma) 02 1 0.1 10 10000 1 100 1000 ta = 100c ? 25c 25c common source v ds = 3 v gate?source voltage v gs (v) r ds (on) ? v gs drain?source on-resistance r ds (on) (m ? ) 0 4 10 8 2 6 0 500 1000 common source i d = 0.15 a 25c ? 25c ta = 100c r ds (on) ? i d drain?source on-resistance r ds (on) (m ? ) 0 0 1000 2000 500 1000 1.8 v 2.5 v 4.5 v v gs = 1.5 v common source ta = 25c r ds (on) ? ta ambient temperature ta (c) drain?source on-resistance r ds (on) (m ? ) 0 1000 500 ? 50 50 150 0 100 common source 2.5 v, 0.4 a 4.5 v, 0.5 a 1.8 v, 0.25 a v gs = 1.5 v, i d = 0.15 a i d ? v ds drain?source voltage v ds (v) drain current i d (ma) 0 0 1000 0.4 1.0 0.6 0.2 2000 v gs = 1.2 v 1.5 v common source ta = 25c 4 v 10 v 2.5 v 0.8 1.8 v
SSM6N42FE 2009-10-13 4 q1, q2 common gate threshold voltage v th (v) v th ? ta ambient temperature ta (c) ? 50 50 150 0 100 0 1.0 0.5 common source i d = 1 ma v ds = 3 v i dr ? v ds drain?source voltage v ds (v) drain reverse current i dr (ma) 10 10000 1 100 1000 0 ? 1.5 ? 0.5 ? 1 common source v gs = 0 v g d s i dr 25c ta = 100c ? 25c t ? i d drain current i d (ma) switching time t (ns) 1 10 100 1000 1 5 10 500 1000 10000 10000 t f t r t on t off common source v dd = 10 v v gs = 0 to 2.5 v ta = 2 5 c 50 100 5000 total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 2 4 8 10 6 2 1 4 vdd = 10 v vdd = 16 v 3 common source i d = 0.8 a ta = 25c ? y fs ? ? i d drain current i d (ma) forward transfer admittance ? y fs ? (s) 1 10 1000 10000 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 common source v ds = 3 v ta = 2 5 c 10 100 drain?source voltage v ds (v) c ? v ds capacitance c (pf) 100 1000 1 50 500 1 10 100 5 50 0.5 0.1 common source v gs = 0 v f = 1 mhz ta = 25c c oss c rss c iss 10 5
SSM6N42FE 2009-10-13 5 q1, q2 common ambient temperature ta (c) p d * ? t a drain power dissipation p d * (mw) 200 0 150 120 100 140 100 150 160 250 80 60 40 20 0 -20 -40 mounted on fr4 board. (25.4mm 25.4mm 1.6mm , cu pad : 0.135 mm 2 6) *:total rating
SSM6N42FE 2009-10-13 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? 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